elektronische bauelemente BCX70J npn silicon plastic-encapsulate transistor 26-oct-2009 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low current ? low voltage marking : aj maximum ratings (at t a = 25 c unless otherwise specified) parameter symbol ratings unit collector - base voltage v cbo 45 v collector - emitter voltage v ceo 45 v emitter - base voltage v ebo 5 v collector current - continuous i c 200 ma collector power dissapation p c 250 mw junction, storage temperature t j , t stg 150, -55~150
electrical characteristics (at t a = 25 c unless otherwise specified) parameter test conditions symbol min. typ. max. unit collector-base breakdown voltage i c =10a, i e =0 v (br)cbo 45 v collector-emitter breakdown voltage i c =2ma, i b =0 v (br)ceo 45 v emitter-base breakdown voltage i e =1a, i c =0 v (br)ebo 5 v collector cut-off current v ce =45v, v be =0 i ces 20 na v ce =5v, i c =10a h fe1 30 v ce =5v, i c =2ma h fe2 250 460 dc current gain v ce =1v, i c =50ma h fe3 90 i c =10ma, i b =0.25ma v ce(sat)1 0.05 0.35 v collector-emitter saturation voltage i c =50ma, i b =1.25ma v ce(sat)2 0.1 0.55 v i c =10ma, i b =-0.25ma v be(sat)1 0.6 0.85 v base-emitter saturation voltage i c =50ma, i b =1.25ma v be(sat)2 0.7 1.05 v base-emitter voltage v ce =5v, i c =2ma v be 0.55 0.75 v collector output capacitance v cb =10v, i e =0, f =1mhz c ob 1.7 pf noise figure v ce =5v,i c =200a,f=1khz, bw=200hz,rs=2k ? nf 6 db gain-bandwidth product v ce =5v, i c =10ma,f=100mhz f t 100 250 mhz so t -23 millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50 top view a l c b d g h j f k e 1 2 3 1 2 3
elektronische bauelemente BCX70J npn silicon plastic-encapsulate transistor 26-oct-2009 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente BCX70J npn silicon plastic-encapsulate transistor 26-oct-2009 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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